| 摘要 |
PURPOSE:To control vapor deposition rate as desired, by irradiating ion beams of an inert gas on the surface of a target made of an insulator or a high resistance material to neutralize charged electrons on the surface of the target. CONSTITUTION:By irradiating electron beams B from an electron gun 4 on a target 2 made of an insulator or a high resistance material in a vacuum chamber 9, the constituent material of the target 2 is evaporated to form a thin film made of the insulator or the high resistance material on the surface of a sample 1 to be treated. At the same time, ion beams A of an inert gas are projected by an ion beam generator 6 to irradiate the surface of the target 2. Accordingly, the electrificiation of the surface of the target 2 is prevented, and the vapor deposition rate can be stably controlled with high reproducibility. |
