| 摘要 |
PURPOSE:To obtain a photodetector having high density and high S/N ratio by forming a transparent conductive film as isolated into many segments on a transparent insulating substrate, and forming a recess at the isolating region between the transparent conductive films on the substrate. CONSTITUTION:A transparent electrode 22 and a resist 23 are superposed on an insulating substrate 21, a part 24 is exposed and removed, and when the electrode 22 is etched, the substrate 21 is partly etched to form a recess 25. When the substrate 1 by this configuration is employed, a light which passes vertically through a hole of a mask 5 reaches directly a transparent electrode 4, oblique incident light 8 is refracted at 9, then refracted at 10 at the recess 6 of the substrate 1, and incident to an amorphous Si 3 or reflected at 11, and the light which is incident to the adjacent electrode 4 is lowered, and S/N ratio is improved. Further, the stray light 12 in the substrate 1 is refracted at 13, 14 in the recess 6 and removed. |
