发明名称 FORMING METHOD OF METAL FILM IN THERMAL HEAD
摘要 PURPOSE:To enable to form metal films simultaneously on a plurality of substrates by slightly displacing the substrates in a vacuum tank, laminating, arranging the substrates, and forming by a thin film method the metal film at the exposed ends of the substrates. CONSTITUTION:A glazed layer 2 is formed on a substrate 1. Substrates 1 are laminated and contained in the part except the layer 2 in a recess 8 formed on an inner cover 7 to become the substrate mounting surface of a vacuum tank 6, and the lowermost substrate 1 is supported by a supporting surface 9. Heat resistors 3 of metal films and thermally conductive layer 4 are respectively formed by a depositing method or sputtering method on the part of the exposed layer of each substrate 1, and a head unit H is formed via a resist etching step. In this manner, when each metal film is formed in the tank 6, the troublesome operation of masking the substrates 1 one by one can be eliminated, and a metal film may be formed simultaneously on a plurality of substrates.
申请公布号 JPS58220482(A) 申请公布日期 1983.12.22
申请号 JP19820104301 申请日期 1982.06.17
申请人 TOKYO DENKI KK 发明人 SUZUKI SATOSHI;HIRATA MASANOBU;OKUNO SHIGERU;KOBAYASHI YOUZOU
分类号 H01C17/06;B41J2/335;H01L49/00;H01L49/02;H05K3/14 主分类号 H01C17/06
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