| 摘要 |
PURPOSE:To enable the melting in the atmosphere and simplify the titled apparatus by a method wherein an auxiliary heat generating body is provided around a melting crucible made of quartz and is heated by an induction heating when a thin band is manufactured by melting a semiconductor device material by an induction heating method followed by rapid cooling thereof. CONSTITUTION:A quartz crucible not a graphite one is used as a crucible to melt a semiconductor material by induction heating. Firstly, a semiconductor material to be melted is put into a quartz crucible 14 and an auxiliary exothermic material 15 such as SiC that generates heat by induction of high frequency is put into the crucible 14. A high-frequency coil 3 is wound round the crucible 14. Next, the crucible 14 is supported by an air cylinder 5 through a fixture jig 9 and a cylinder rod 10. an inert gas such as argon is blown into through an inert gas inlet tube 7 mounted on the jig 9. After this procedure, when the material is melted, a shutter positioned below the crucible 14 is opened to jet out the molten material 1 from the nozzle 8. In this way a thin band of the material 1 is formed on the surface of a rotating roll 6. |
