| 摘要 |
PURPOSE:To prevent the yield of an element from decreasing by accumulating an amorphous Si or the like of P-I-N conductive type which contains hydrogen or halogen element on conductive substrate and then reducing the contents as compared with that after the accumulation. CONSTITUTION:An amorphous Si layer 3 which contains hydrogen or halogen element is accumulated on a conductive substrate 1, heat treated at the substrate temperature or lower at the accumulating time in an atmosphere which does not remarkably modify the surface of the layer 3 to reduce the content of the hydrogen or halogen. The higher the temperature and the treating period increase, the more the reducing amount increases. After treated at 200 deg.C for approx. 90min, a protecting film 10 of polyimide or the like for mounting aluminum electrodes 6, substrate electrodes 7, lead wirings 8, 9 is covered. When the layer 3 is thus heat treated, the mutual movement in the boundary between the aluminum electrode and the amorphous Si can be suppressed at the heat treating time of hardening the film 10, and the mutual movement based on disturbance due to heat or the like can be suppressed even out of the hardening time. Accordingly, a thin film element of high reliability can be obtained. |
