发明名称 HEAT TREATMENT METHOD FOR SEMICONDUCTOR
摘要 PURPOSE:To rapidly perform the cooling and temperature rise of crystal growing boats by a method wherein a heating part and a cooling part are provided in a furnace core tube, and a crystal growing boat is enabled to move by means of a thermocouple tube. CONSTITUTION:The heating part 20 and the cooling part 21 are provided in the furnace core tube 6. The heating part 20 has a fixed heater part 1. The crystal growing boat 2 is constituted to be able to move between the heating part 20 and the cooling part 21. A substrate 25 is mounted on the crystal growing boat 2, a sliding part 24 holding a growing solution 23 is provided thereon, and the sliding part 24 is constituted to be able to move by an operating rod 7. The boat 2 is placed on a boat base 31, and the movement thereof is performed by the detachment of the thermocoule quartz tube 8 for measuring temperature. Such a constitution enables to rapidly perform the cooling and temperature rise of the crystal growing boat by means of a simple device.
申请公布号 JPS58219733(A) 申请公布日期 1983.12.21
申请号 JP19820101856 申请日期 1982.06.14
申请人 MATSUSHITA DENKI SANGYO KK 发明人 SASAI YOUICHI
分类号 H01L21/22;H01L21/208 主分类号 H01L21/22
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