发明名称 THIN PLATE EXPOSURE METHOD AND DEVICE THEREFOR
摘要 PURPOSE:To perform the exposure of wafers at a high speed and to a high accuracy by a method wherein a wafer is so constituted as to be able to position at the exposure position for the mask by means of a step and repeating device, and then a clearance adjusting device is provided below being opposed to the mask. CONSTITUTION:The wafer 4 is so constituted as to be able to absorb by vacuum onto a ring form holding device 81, and the holding device 81 is so constituted as to be able to move in the directions of X-X' and Y-Y' by means of the step and repeat device 82. The wafer 4 is positioned below the mask 2 at the fixed position by this repeat device 82. A deformation chuck device 83 and an alignment device 84 are provided at the under position opposed to the mask 2. These devices 83 and 84 are accurately adjusted, in the very small clearance between the exposure parts positioned successively under the mask 2 and the mask, by the step and repeating device 82. Thereby, the exposure of high accuracy and high speed can be performed. Besides, the miniaturization of the chuck device 83 and the alignment device 84 can be contrived.
申请公布号 JPS58219735(A) 申请公布日期 1983.12.21
申请号 JP19820102017 申请日期 1982.06.16
申请人 HITACHI SEISAKUSHO KK 发明人 KENBOU YUKIO;AKIYAMA NOBUYUKI;KUJI TOMOHIRO
分类号 H01L21/027;G03F7/20;H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/027
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