| 摘要 |
<p>An electroluminescent device (10, . . . 60) comprises an electroluminescent layer (11,... 61) together with p-type silicon layer (13, . . . 63) and an n-type silicon layer (14, . . . 64). The layers (11,13,14, . . . 61,63,64) constitute a heterojunction or transistor-like structure which limits the total device current during operation. This avoids current runaway experienced in prior art devices, and has been found to extend operating life. The electroluminescent layer (21,31,41) may be in contact with a transition metal oxide layer (25,35,45) to provide self-healing of pinholes. The electroluminescent device (30) may include additional p-type and n-type silicon layers (36 and 37) to provide a degree of current control. The p-type silicon layer (43,53,63) may be connected to an ohmic contact (48,58,68) for control of device current. The silicon layers (13,14, . . . 63,64,36,37) are either crystalline or amorphous.</p> |
