| 摘要 |
PURPOSE:To obtain the manufacturing method of an MOS type semiconductor device suitable for high speed based on the increase in drain withstand voltage and the decrease in junction capacity, by continuously performing the implantation of ions of the same kind only by changing an accelerating voltage and a dosage thereof. CONSTITUTION:An n<-> region 3' is formed at the outside of source and drain regions 3, and an n<+> region 3'' is formed at the inside thereof. When As ions are implanted through a gate oxide film, whose thickness is 350Angstrom , conditions are shown by the Table. The diffusing depth of the n<+> region 3'' in the depth direction is made to be within 0.2mum even after the heat treatment at 1,000 deg.C for 10min. Steep junction between the region and a substrate 1 is made to be slanted junction in forming the (n) region 3 and the n<-> region 3'. In this way, concentration of an electric field in the vicinity of a drain is reduced, and an hot electron effect is alleviated. Owing to the slanted juction, a junction capacity is reduced, and a high speed is obtained. Diffusion resistance can be adjusted by the dosage at the (n) region 3. |
