发明名称 METHOD OF ADHESION OF PASSIVATION LAYER TO GOLD METALIZATION REGIONS IN A SEMICONDUCTOR DEVICE
摘要 The adhesion of a passivating layer to Au conductors is improved by the provision of an interlayer formed by reacting a layer of metal with the Au and removing the excess reactive metal before depositing the passivating layer. The Au contacts and conductors 5 may be formed by sputtering and contact sites are masked by photoresist 6. The layer 7 of Al, Ti, Zr, Cr or Mo is deposited by sputtering forming a reacted layer 8 at the exposed surfaces of the Au conductors. The unreacted metal of layer 7 is removed by etching and the resist 6 removed. A layer of passivation is deposited and openings etched to expose the unreacted contact sites on the Au conductors e.g. for contact by a second layer of conductors. <IMAGE>
申请公布号 GB2071413(B) 申请公布日期 1983.12.21
申请号 GB19810003213 申请日期 1981.02.03
申请人 TRW INC 发明人
分类号 H01L23/532;(IPC1-7):01L21/28 主分类号 H01L23/532
代理机构 代理人
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