| 发明名称 |
Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate |
| 摘要 |
A first compound semiconductor layer is epitaxially formed on a surface of a semi-insulating substrate. The first semiconductor layer is then removed and a second compound semiconductor layer is epitaxially formed on the substrate surface which is now exposed.
|
| 申请公布号 |
US4421576(A) |
申请公布日期 |
1983.12.20 |
| 申请号 |
US19810302196 |
申请日期 |
1981.09.14 |
| 申请人 |
RCA CORPORATION |
发明人 |
JOLLY, STUART T. |
| 分类号 |
H01L21/20;(IPC1-7):H01L21/20;H01L21/30 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
