| 摘要 |
PURPOSE:To attain a stable memory cell having an intense alpha-ray resistance, by keeping a potential difference between collectors of the memory cell larger so as not to invert the information of the memory cell with a noise current due to alpha particles, when alpha particles pass through the memory cell at the storage of information relating to a bipolar semiconductor memory. CONSTITUTION:Supporse that VM is decreased by VMalpha due to noise current, the information holding voltage of a memory cell VM is VM VF+IST.R2-VMalpha, where VF (M1.K.T/q)ln(M2.IST/IS). Further, when the VF is increased, the capacitor of the Schottky barrier diode is decreased, and then the transient memory collector voltage difference is reduced in reading out information, and the memory cell is made instable at transient state. In increasing sufficiently the R2 so as to obtain VF+ISTR2>VMalpha, a memory cell having an itense alpha-ray resistance is attained. In Figure, 10 is a resistor formed the N epitaxial layer and corresponds to the resistor R2 in the circuit diagram, and 11 is P type substrate. |
