| 摘要 |
<p>PURPOSE:To ensure a high reliability electrode by forming an electrode pattern on a transparent substrate and thereafter forming an insulating film and an amorphous silicon film, and etching those films with mixed gas of sulfur hexafluoride gas and nitrogen trifluoride gas or carbon fluoride chloride gas in a plasma state at a predetermined flow rate ratio is oxygen. CONSTITUTION:A transparent conductive film is formed on a glass substrate 1 and unnecessary parts are eliminated through patterning to yield a picture element electrode 2. A gate electrode 3 is formed with high melting point metal such as chromium, etc. Further, a silicon nitride gate insulating film 4 and an amorphous silicon film 5 are formed in order to form a desired pattern, and the gate insulating film and the amorphous silicon film are etched. The taper etching is carried out in mixed gas of sulfur hexafluoride gas and nitrogen trifluoride gas or carbon fluoride chloride gas in a plasma state with oxygen gas of a 10-38% flow rate ratio.</p> |
