| 摘要 |
PURPOSE:To obtain a capacity sufficient in a high integration device by a method wherein a part or the entire body of the insulation film between the lower layer and the upper layer wirings of the completed device composes the capacity components of the circuit of the device. CONSTITUTION:As conventional, a field oxide film 202, a gate oxide film 203, a gate electrode 204, and a diffused layer 205 are formed on an Si substrate 201. They are covered with PSG206, thus opening window, and then an Al digit line 207, a capacity electrode 208, etc. are formed. Next, Si3N4 films 209a and 209b and PSG210 are superposed. The PSG210 on the electrode 208 is removed, thus the Si3N4 209b is exposed, and an Al capacity gate 211 and other main wirings are formed. Thereat, capacity is formed of the Si3N4 film 209b between the Al layers 208 and 211. This constitution enables to obtain a sufficient capacity even in the case of reducing the memory cell area, and therefore a device of high integration degree and high reliability can be obtained. |
