发明名称 One-bath etching method for processing gravure plate, and etching condition calculating device
摘要 In a one-bath etching process in which gravure cells are formed in the surface of a gravure cylinder with one kind of etching solution having a predetermined density, in order to control the cell depths by suitably selecting the cylinder speed, data is provided by correlating a permeation characteristic which is obtained by an inspecting solution substantially similar in characteristic to the etching solution to that which is obtained by the etching solution, while data is obtained by correlating to cylinder speeds, and these data are compared with data which are obtained from the resist layer of the cylinder which is to be used for printing, to determine the total etching time and the cylinder speeds.
申请公布号 US4420363(A) 申请公布日期 1983.12.13
申请号 US19820444517 申请日期 1982.11.26
申请人 DAI NIPPON INSATSU KABUSHIKI KAISHA 发明人 TACHIBANA, EIICHI;KATSUTA, TETSURO
分类号 B41C1/02;(IPC1-7):B41C1/00 主分类号 B41C1/02
代理机构 代理人
主权项
地址