| 发明名称 |
Method for etching a recrystallized aluminum foil for electrolytic capacitors |
| 摘要 |
Method for etching a recrystallized aluminum foil for electrolytic capacitors by carrying out an electrolytic tunnel formation in a first etching stage, characterized by the feature that the further etching for tunnel enlargement takes place chemically in one or several etching stages.
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| 申请公布号 |
US4420367(A) |
申请公布日期 |
1983.12.13 |
| 申请号 |
US19820368515 |
申请日期 |
1982.04.15 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
LOECHER, GUENTER |
| 分类号 |
C23F1/20;C25F3/04;H01G9/04;H01G9/055;(IPC1-7):B44C1/22;C03C15/00;C03C25/06;C23F1/00 |
主分类号 |
C23F1/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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