发明名称 |
Wide-bandwidth low-distortion amplifier |
摘要 |
A low-noise wide-band bipolar transistor amplifier in which distortion caused by non-linear transistor operating characteristics is substantially eliminated. An input signal is coupled to the base of a first transistor connected in an emitter follower configuration with the signal formed at the emitter of the first transistor coupled to the base of a second transistor. Currents are supplied to the first and second transistors by a current mirror circuit in such a manner that a ratio of the current supplied to the first transistor to the current supplied to the second transistor is made constant. An output signal is produced in response to current variations in a transistor of the current mirror circuit which supplies current to the second transistor.
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申请公布号 |
US4420725(A) |
申请公布日期 |
1983.12.13 |
申请号 |
US19800189276 |
申请日期 |
1980.09.22 |
申请人 |
PIONEER ELECTRONIC CORPORATION |
发明人 |
SUEYOSHI, SUSUMU;ISHIKAWA, KIKUO |
分类号 |
H03F1/32;H03F3/18;H03F3/347;(IPC1-7):H03F3/18 |
主分类号 |
H03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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