| 摘要 |
PURPOSE:To align a mask accurately by increasing reflectivity only of a target section without obstructing an antireflection effect of an Si film for forming a minute pattern. CONSTITUTION:The surface of the Al-Si alloy film 3 is coated with an Si antireflection film 4. Laser rays are irradiated selectively to the target section 5 of a substrate 1, one part thereof has the alignment target 2. The laser rays are irradiated in order to diffuse the antireflection film 4 into the alloy film 3 and improve the reflectively of ultraviolet rays of the surface of the alloy film 3. Accordingly, the accuracy of detection of the target section 5 is improved on mask alignment. |
