| 摘要 |
PURPOSE:To reduce power consumption by making the potential of a first conduction type semiconductor substrate higher than ground potential and supplying the injector of an I<2>L section with currents through the first conduction type semiconductor substrate from the minimum potential section of a linear section. CONSTITUTION:The potential of the P type substrate 1 is increased previously by VBE, and an N<+> layer 8 formed to the base of the PNP transistor of the I<2>L section is grounded (OV potential). A reverse PNP transistor, which uses the substrate 1 as the injector, an epitaxial N layer 2 as a base and a P diffusion layer 9 as a collector, is constituted by removing one part of the N<+> buried layer 7 of the I<2>L section at that time. A reverse transistor, which uses the layer 9 as a base, an N<+> diffusion layer 10 as a collector, the epitaxial N layer 2 and the layer 7 as emitters, is constituted. The GND l of the linear section and an isolation P<+> layer 3 are connected, currents flowing through the GND l are implanted to the layer 9 of an NPN transistor as the injector currents I of the I<2>L, and the reactive currents of the linear section are utilized for the I<2>L. |
