| 摘要 |
PURPOSE:To nearly equalize the channel of a driving current with a stripe width unifying the lateral mode by a method wherein a current squeezing layer is formed on a double structured N type semiconductor layer with different impurity concentration. CONSTITUTION:The conductive type of a substrate 21 and that of the first semiconductor layer 23 as one layer of a double hetero junction structure 23 laminated on the substrate 21 are differentiated from each other and the second semiconductor layer 26 as the other layer of said junction structure is formed into a double structure with different impurity concentration forming a current squeezing layer 29 on the layer 26 while one carrier injection electrode 27 is formed on said layer 26 without any insulating layer and the other carrier injection electrode 22 is formed on said layer 23. Consequently the width of a light emitting region may be nearly equalized with the stripe width unifying the oscillating mode for the current squeezing layer to be integrally formed on the same substrate reducing the threshold current value, improving radiation and reliability. |
