POSITIONING MARK FOR ELECTRON-BEAM DIRECT EXPOSURE AND MANUFACTURE THEREOF

摘要

PURPOSE:To execute an electron-beam exposure method with high accuracy by using the mark in which a mark pattern formed by TiWSi or MoSi is coated with a film in AlN. CONSTITUTION:A silicon dioxide film 2 is formed selectively onto a semiconductor substrate 1 with the exception of a positioning mark formation prearranged region 3. A layer 4 in TiWSi or MoSi is formed to the whole surface of the substrate 1. The layer 4 is removed from other regions except only a section on a positioning mask pattern 4'. A layer 5 in AlN is formed to the whole surface of the substrate 1, and the layer 5 is removed from other regions while leaving a section on a region coating the pattern 4'.