| 摘要 |
PURPOSE:To improve the characteristics of an element by a method wherein an oxide film insulating layer to be used for tunnel is formed in the plasma generated by magnetron type discharge and in an uniform magnetic field, thereby enabling to form an insulating film uniformly and with an excellent controllability. CONSTITUTION:A substrate 6 of Josephson element is fixed to the lower surface of the cathode electrode 3 which constitutes a planar type magnetron, a vaporizing source sample 7 is fixed on the upper surface of an anode electrode 5, and shutters 11 and 12 for sputtering suppression is interposed between the substrate 6 and the sample 7. Then, the inside the device is exhausted using an exhaust port 9, and after argon and oxygen gas has been introduced from an introducing port, a uniformly distributed magnetic field is formed by a solenoid coil 8, a current is applied in-between the electrodes 3 and 5, thereby enabling to form an oxide film insulating layer for tunnel which is the junction part of a Josephson element. |
