| 摘要 |
PURPOSE:To superpose the target patterns with high accuracy by precisely detecting reflected light from the target pattern and accurately recognizing the position of the pattern. CONSTITUTION:A silicon wafer 1 is processed through a normal method, and the target pattern 3 for positioning is formed. The whole surface of the wafer is coated with a photo-resist film 2. Ultraviolet rays 6 are irradiated selectively to a pattern detecting region 4 through a photo-mask 5 to develop the region 4 through a normal method, and the resist film 2 of the region 4 is removed. Ultraviolet beams for detecting the pattern are irradiated to the region 4, and the position of the pattern is detected by utilizing the magnitude of reflection intensity by the scattering of beams in the pattern 3. Accordingly, a detecting signal, symmetry thereof is excellent and which is extremely distinct, can be obtained. |
