发明名称 PREPARATION OF SINGLE CRYSTAL WAFER
摘要 PURPOSE:To clarify the relationship of the upper and lower positions of the single crystal wafer by preparing a marker, which can discriminate the upper and lower relationship of a crystal, in the whole single crystal. CONSTITUTION:The marker, which can discriminate the upper and lower relationship of the crystal, is prepared in the whole single crystal on processes into cylindrical grinding, preparation of an orientation flat, cutting into the wafers, etc. of a single crystal grown. For example, the width of the orientation flat is changed up to a lower section from an upper section. Or a kerf 2 is formed, and the width of the kerf or a distance from the orientation flat is changed. Accordingly, the wafers in one single crystal can be positioned simply. For example, surface-wave sonic-velocity distribution in a LiNbO3 single crystal can be grasped through the extraction of the wafers, and the yield of a TV-IF filter is improved.
申请公布号 JPS58213431(A) 申请公布日期 1983.12.12
申请号 JP19820096147 申请日期 1982.06.07
申请人 HITACHI SEISAKUSHO KK 发明人 ASHIDA SAKICHI;KUDOU SANEHIRO;TOYAMA TATSUO
分类号 H01L21/304;(IPC1-7):01L21/304 主分类号 H01L21/304
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