| 摘要 |
PURPOSE:To improve the degree of integration of electrode wiring by electrically insulating and isolating the electrode wiring, which are adjoined and one parts thereof are arranged in parallel, and positioning them onto an electric insulating film, height thereof differs. CONSTITUTION:An element is formed to one main surface on a silicon substrate 201 by using normal diffusion, ion implantation, etc. The surface is coated with a silicon oxide film 202 in thickness such as approximately 1.0-1.5mum thicker than one normally used. Steps 203a, 203c for forming wiring and openings 204a, 204c for extracting electrodes are formed by using a normal selective etching method. The whole surface is coated with aluminum 205 (205a-205e), and etched uniformly. |
