| 摘要 |
PURPOSE:To increase etching speed and selectivity to a resist film and to reduce etching residue on a base material in the titled method using a reactive ionic etching apparatus, by mixing a reactive gaseous mixture with oxygen. CONSTITUTION:An Al is dry etched using a reactive ionic etching apparatus in which plasma is generated between parallel flat electrodes by introducing a reactive gas. At this time, a gaseous mixture contg. at least BCl3, CCl4 and O2 is used as the reactive gas. The etching speed is made higher than that of a conventional method using a gaseous mixture of BCl3 with CCl4, and the selectivity to a resist film is increased when the volume ratio of CCl4/BCl3 is high. A gaseous mixture having the high volume ratio of CCl4/BCl3 can not be used so far. Eetching residue can be removed when O2 is not contained in large quantities. |
