| 摘要 |
PURPOSE:To obtain the prescribed contacting area by entirely exposing the part of an electrode layer of the lower layer under an electrode wiring layer of an upper layer, covering a thermally oxidized film at the side of the part of the electrode layer, extending the wiring layer on the thermally oxidized film to be bonded on the exposed surface, thereby enabling high density and high speed operation. CONSTITUTION:A transistor 210 is formed at the intersection between the reverse conductive type region 102 of digit line and a gate electrode 201 of the lower layer of polycrystalline silicon, and a hole 202 is opened directly on a channel region. A transistor 210 and a capacity element 220 have common reverse conductive type region 106. A word line 103 of the upper layer of aluminum is passed on the upper surface of the electrode 201, mainly passed on the active region, thereby reducing reactive area part. A hole 202 for obtaining the conductive coupling between the word lie 103 and the electrode 201 is a hole self-aligned on the upper surface of the electrode 201. The sizes of the electrode 201 and the hole 202 (contacting hole) becomes equal. |
