| 摘要 |
<p>PURPOSE:To remarkably improve the reliability of an MIS transistor by introducing a thin film layer capable of being covered with amorphous silicon containing impurity and the first metal which does not lose conductivity at the time of removing the thin film layer, thereby significantly alleviating the restriction of the case of operating with a pulse. CONSTITUTION:An amorphous silicon layer 4 containing impurity, the first insulating layer such as a nitrided silicon layer 3, the first metal layer such as a molybdenum layer 3, an aluminum layer 13 such as a thin film layer are sequentially covered on an insulating substrate 1, and with a photosensitive resin 14 selectively covered as a mask a thin film layer 1, the first metal layer 2, and the first insulating layer 3 are sequentially selectively etched. After an amorphous silicon layer containing no impurity is selectively removed to form an insular region 4', an amorphous silicon layer 5 containing impurity is covered on the overall surface. After an amorphous silicon layer containing impurity together with the amorphous silicon layer containing impurity covered on the layer 4 containing no impurity is selectively allowed to remain, source and drain wirings 7, 8 made of the second metal such as aluminum are selectively covered on the amorphous silicon layer containing impurity.</p> |
