| 摘要 |
PURPOSE:To remarkably improve the high integration and high accuracy of a nonvolatile memory device by laminating two and more different nitrided silicon films containing hydrogen when a gate insulated film is formed. CONSTITUTION:A dioxidized silicon film 2 is formed on an entire P type substrate 1, a nitrided silicon film 3 is then formed, and the prescribed part is etched by the known photoetching technique. Then, a field oxidized film 4 is formed. After the film 3 and the film 3 disposed under the film 3 are sequentially etched, a thin dioxidized silicon film 5 is oxidized in oxygen atmosphere. Eventually, in order to form electrodes on the source and drain regions 9, 10, dioxidized silicon film 11, nitrided silicon films 6, 7 and dioxidized silicon film 5 are etched to open the contacting holes, and source and drain electrodes 12, 13 are formed. |
