| 摘要 |
<p>A thin film electric field light-emitting device has a thin fluorescent film, a thin dielectric film, and electrodes for applying a voltage to the films, the thin dielectric film is composed of a dielectric expressed by the general formula AB2O6, where A is a 2-valency metallic element and B a 5-valency metallic element. This dielectric is used to reduce the drive voltage without decreasing the intensity of the light emitted by the light-emitting device. Further, a composite laminate of thin dielectric films i n which thin dielectric films that do not break down a self-recovery type of insulator are used, thereby causing the entire composite thin dielectric film to break down the self-recovery type of insulator in such a manner that the value of the product of the insulating breakdown electric field intensity and the specific dielectric constant is large, thereby providing a thin film electric field light-emitting device with excellent characteristics.</p> |
