| 摘要 |
PURPOSE:To stably and high speedily form a deposited film on the surface of a base material by arranging a microwave permeable base material extremely near to a window of a dielectric material and irradiating microwave from the outside and injecting a reacting gas for film formation to the base material from a reaction vessel side. CONSTITUTION:A window 3 of a dielectric material made of quartz glass wherein microwave is permeated therethrough and vacuum airtightness can be held is provided to a reaction vessel 1 constituted by providing an exhaust pipe 6 to a vacuum vessel 2. A base plate 9 consisting of a microwave permeable member is arranged extremely near to the above- mentioned window 3 of the dielectric material in the reaction vessel 1 side which is vacuumed and exhausted in the proper degree of vacuum. As the above-mentioned base plate 9, in such a case that microwave has >=500MHz frequency, a dielectric material such as quartz glass, Al2O3 and ceramic having >=0.0006 tandelta loss angle of the dielectric material is preferably used. The above-mentioned base plate 9 is made at the prescribed temp. by the radiation heat of a heater 10. Thereafter while discharging reaction gas for film formation to the neighborhood of the base plate 9 through the many discharge holes 7' of a feed pipe 7 for a gaseous raw material, film formation is performed on the base plate 9 by irradiating microwave 51 from an electric power source 5 for microwave, energizing and decomposing the above-mentioned gaseous raw material in a plasma generating region 11. |
