Process for producing dielectrically insulated solid-state circuits

摘要

To produce dielectrically insulated solid-state circuits, specified regions of the principal faces of a silicon single-crystal substrate are converted into silicon dioxide layers and the entire surface is then coated with a polysilicon layer. Laser or electron beam treatment is used to epitaxially recrystallise those regions of the polysilicon layer which adjoin the single-crystal substrate horizontally between the silicon dioxide layers. The recrystallisation process is extended to the entire polysilicon layer and the single-crystal silicon layer produced at the surface regions situated above the regions where the single-crystal silicon layer is joined to the silicon substrate is converted into silicon dioxide, thereby producing single-crystal silicon islands which are surrounded by silicon dioxide and in which the solid-state circuits can then be arranged. <IMAGE>