| 摘要 |
PURPOSE:To form a silicon nitride film by direct nitriding of the surface of silicon substrate through chemical reaction of nitride gas plasma. CONSTITUTION:A silicon plate 10 is loaded on a boat 3, the boat 3 is put into the reaction tube 1, a flange 5 is closed and a high frequency power supply connector 3a is connected to a high frequency power supply. Next, the inside of reaction tube 1 is highly vacuumed by the vacuum system 6 and is thereafter kept at the specified degree of vacuum by introducing the nitride gas purified by the gas purificator. An additive which accelerates reaction as required is then introduced into the reaction tube 1 through a flow meter 9. Temperature of gas within the reaction tube 1 is sot to the range of 300-1,100 deg.C by the external heater 2, the specified high frequency power in the range of 400kHz-13.56MHz is applied to an electrode 3 from the high frequency power supply, thereby the nitride gas in the reaction tube 1 generates plasma, a silicon substrate 10 is directly nitrided by chemical reaction of plasma and accordingly a silicon nitride film is formed on the surface. |
