| 摘要 |
PURPOSE:To obtain a semiconductor device having improved element characteristic by forming a polycrystalline silicon layer on a nitride layer and rejecting entrance of impurity into the region just below the electrode and wiring through provision of processing for converting said silicon layer to the conductive region of specified pattern. CONSTITUTION:An impurity is diffused with the gate electrode 25 used as the mask, impurity region of source 27 and drain 28 is formed within the element region, the same impurity is introduced also into the gate electrode 27 and wiring layer 26 and these are converted to conductive region. Then, an oxide film 29 is formed on the field oxide film 21, source 27, drain 28, gate electrode 25 and wiring layer 26. A contact hole 30 connected to the wiring layer 26 is formed on the oxide film 29. Thereafter, the BPSG film 31 is formed on an oxide film 29 and a window connected to the wiring layer 26 is opened in order to prevent generation of open defect between the extended wiring layer 33 and wiring layer 26. The extended wiring layer 33 consisting of aluminum to be connected to the wiring layer 26 through the window and contact hole is formed, thus completing a semiconductor device. |
