| 摘要 |
PURPOSE:To improve the adhesion property of a Pd layer (barrier metal layer) which is used for restraining the outer diffusion of semiconductor constituent atoms or ohmic contact forming metals into an Au layer, by adding a binder layer such as a Cr layer between the ohmic contact forming metal layer and the Pd layer. CONSTITUTION:The single crystal thin layer 32 of GaAlAs and GaAs is formed on an N-GaAs substrate 31 to constitute a semiconductor laser diode, and the ohmic electrode 33 of the P-side is formed by vapor deposition of Cr and Au. The ohmic electrode of the N-side is formed by vapor deposition of an Au-Ge layer 34, Cr 35, Pd 36, and Au 37 on the substrate 31. Since the N-side ohmic electrode is restrained from outer diffusion of Ge, Ga, etc. onto the surface of the Au electrode even passing through the heat-treatment process in or after vapor deposition, it has excellent wire bonding performance. |
