| 摘要 |
<p>1. A silicon solar energy converter comprising on the surface thereof an emitter (4, 16) having an ohmic contact (2, 14) and forming a p-n junction (8, 19) with a base region thereof (9, 10, 12; 21, 23, 25) approximately 1 micrometer beneath said surface, characterized in that : - said emitter has two distinct portions, one of which (5, 17) is a high conductivity region adjacent to said ohmic contact and has a doping level of greater than 10**19 atoms per cm**3 and a thickness between 0.1 and 0.2 micrometer, and the other of which (7, 18) is a low conductivity region adjacent to said p-n junction and has a doping level between 10**18 and 10**16 atoms per cm**3 and a thickness between 0.3 and 0.9 micrometer, and in that : - the base, the thickness of which is between 50 and 450 micrometers, has a low conductivity portion (9, 10, 21, 23) and a high conductivity portion (12, 25) providing a back surface field, adjacent to an ohmic contact (3, 15) remote from said p-n junction, - the low conductivity portion of the base being of the n type and having a doping level between 10**13 and 10**16 atoms per cm**3 when said emitter (4) is of the p**+ /p type, and being of the p type and having a doping level between 10**16 and 10**18 atoms per cm**3 when the emitter (16) is of the n**+ /n type.</p> |
