| 摘要 |
PURPOSE:To enable to obtain an output signal of good discrimination property for signal level and sufficiently large amplitude and enable high speed operations by a method wherein the source region of a semiconductor substrate and that of a semiconductor film are brought into contact with each other via a metallic layer or a metal silicide layer. CONSTITUTION:The parasitic diode generated in a conventional inverter device can be eliminated because the source region 105 of an N-channel MOS transistor formed on the P type Si substrate 101 and the P<+> type source region 114 of a polycrystalline Si film pattern 112 laminated on the substrate 101 are in contact with each other via the PtSi layer 109. Therefore, when the inverter device is operated by inputting voltage to the common gate electrode 104, the signal output can be outputted from a signal output electrode 120 between VDD and VSS at full swing, and thus the discrimination property for signal level can be remarkably improved. |
