发明名称 |
Method of producing Josephson tunnel barrier. |
摘要 |
<p>A method of producing a Josephson tunnel barrier is disclosed which comprises a first step of forming a first layer containing at least a lower layer superconducting film (12) on a substrate (11), a second step of selectively removing the surface portion of said first layer except for a predetermined portion to a preselected first depth and a third step of forming a first insulating film (14) at the removed portion of said first layer (12) in a thickness such that the surface of said first insulating film becomes substantially equal to the surface of said predetermined portion. This said second step can include a step of forming a mask (13) on said predetermined portion and then partially removing said lower layer superconducting film (12) to said first depth and said third step can include a step of depositing said first insulating film (14) by a film-forming method having high directivity on the surface of the left portion of said first layer (12) except said predetermined portion and on said mask and a step of removing said mask (13). The method can furthermore comprise a forth step of forming a tunnel barrier (15) on said predetermined portion of said lower layer superconducting film (12) and a fifth step of forming an upper layer superconducting film (16) on the surface of said first insulating film (14) and on said tunnel barrier (16).</p> |
申请公布号 |
EP0095773(A1) |
申请公布日期 |
1983.12.07 |
申请号 |
EP19830105381 |
申请日期 |
1983.05.31 |
申请人 |
NEC CORPORATION |
发明人 |
TSUGE, HISANAO;YOSHIDA, TAKAYOSHI |
分类号 |
H01L39/24;(IPC1-7):01L39/22;01L39/24 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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