| 摘要 |
PURPOSE:To obtain a semiconductor device which provides a semiconductor chip having PHS and assures good manufacturing yield and high reliability by forming an insulating film containing a brazing material with slow fluidity at the side surface of a thick film plated electrode (PHS) so that a brazing material to be used for brazing the main surface of PHS to a metal surface can not flow along the side surface from the main surface of PHS. CONSTITUTION:The insulating films 21 consisting of a silicon oxide and silicon nitride are respectively formed over the main surface and side surface opposing to an n type semiconductor substrate 1 of PHS2 of a diode chip 4. Each insulating film 21 is etched selectively with a resist film 23 used as the mask, the insulating film 21 exposed in the aperture 22 is removed, the insulating film 21 covered with the resist film 23 is respectively left at the side surface of PHS2 as the insulating film 11, and thereafter the resist film 23 is removed from the surface of supporting plate 20. Owing to the insulating film 11 with very slow fluidity, the brazing material 6 is rejected to flow out along the side surface of PHS2 during the brazing between PHS2 and a projected area 5a. |
