| 摘要 |
PURPOSE:To obtain a semiconductor light emitting device useful for new purpose wherein factors of decreasing the brightness are eliminated and thus the characteristic of high brightness is given by a method wherein an N type buffer layer of different kind of impurity is interposed between a P type layer and an N type layer which are composed of compound semiconductor such as GaAlAs. CONSTITUTION:The P type Ga1-xAlAs light emitting layer 2, N type Ga1-z AlzAs buffer layer 6, and N type Ga1-yAlyAs layer 3 are laminated successively by epitaxial method on a P type GaAs substrate 1. The N type layer 3 is changed into low resistance by doping Te approx. 3X10<18>cm<-3>. Then, the N-side electrode 4 and the P-side electrode 5 are formed. The N type buffer layer 6 is doped with Sn 1-5X10<17>cm<-3>. There is no decrease of luminous brightness due to the addition of Te, since the light emitting layer 2 and the P-N junction formed between the light emitting layer 2 and the buffer layer 6, and the N type layer 3 which contains a large amount of non luminous recombination centers by adding Te are isolated from each other. |
