| 摘要 |
PURPOSE:To obtain a hetero epitaxial layer with fewer defects, by providing an Si single crystal layer on a single crystal substrate of any other than Si using an Si hydride, and laminating thereon an Si single crystal layer using an Si compound any other than Si hydrides. CONSTITUTION:An Si substrate 1 is provided thereon with a magnesia spinel epitaxial film 2, on which a first Si layer 5 is laminated using SiH4, followed by a second Si layer 6 using SiCl4. Such a formation, in which an Si layer is first formed using an Si hydride, which has no selectivity with respect to the substrate, and then an Si epitaxial layer is laminated thereon using SiCl4, which has a strong selectivity, makes it possible to obtain an Si single crystal which is extremely small both in unevenness of the surface and in number of defects. The repetition of this formation makes it possible to obtan a single crystal with fewer defects. |
