| 摘要 |
PURPOSE:To increase the dimensional accuracy of the titled junction element as well as to remove the contamination of junction part generating when the region in the vicinity of the junction part is flattened and an insulative film, to be provided on the circumference of said region, is formed by a method wherein the junction part is provided by performing an anisotropic etching on the part other than the tunnel junction part which constitutes a junction element. CONSTITUTION:The first superconductive electrode 32, consisting of Nb, Pb and the like, is formed on an insulative substrate 31 by performing a sputtering method, and a resist mask 33 corresponding to the tunnel junction part is provided on the electrode 32. Then, an anisotropic etching is performed using said resist mask 33, a work is performed on the electrode 32 so that the film thickness in excess of London penetration depth will remain there, the exposed part of the electrode 32 is covered by the first insulative layer 34 and besides, the second insulative layer 35 such as SiO2 and the like is coated on the layer 34. Subsequently, the mask 33 is removed together with the insulative layers 34 and 35, and a tunnel junction layer 36 of several tens Angstrom in thickness is generated by performing a thermal oxidation on the exposed electrode 32. Then, the second superconductive electrode 37, made of the material same as that which is extended on the layer 35, is coated on the layer 36. |
