| 摘要 |
PURPOSE:To uniform deposition speed, etching speed and the like within the wafer surface and prevent the flying of powder from a wafer-mounting electrode, by coating the wafer-mounting electrode of a parallel plane plasma generator, with SiC, Si or the like. CONSTITUTION:The parallel plane plasma generator produces plasmas for CVD, plasma etching, reactive ion etching and so forth, according to the kind of reaction gas, pressure, high-frequency condition and the like. All the plasmas produce neutral plasma seeds and ionospheric plasma seeds. A wafer-mounting electrode is coated with a semiconductor, which will not contaminate wafers, selected from compound semiconductors of elements of the IV family in the periodic table, such as SiC, and IV-family semiconductors, such as Si. As a result, the state of the charges accumulated on the electrode approximates that on the wafer, and also the plasma seed concentrations approximate each other in both the regions. Therefore, the deposition or etching speed is uniformed. Since a film is simultaneously provided, the flying of powder from the electrode plate of graphite, or the migration of a contaminated metal is prevented to improve manufacturing accuracy and reliability. |
