发明名称 |
Apparatus and method for plasma-assisted etching of wafers |
摘要 |
In a plasma-assisted etching apparatus and method designed to pattern aluminum or polysilicon, surfaces in the reaction chamber are coated with a layer of aluminum oxide. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.
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申请公布号 |
US4419201(A) |
申请公布日期 |
1983.12.06 |
申请号 |
US19810295531 |
申请日期 |
1981.08.24 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
LEVINSTEIN, HYMAN J.;VRATNY, FREDERICK |
分类号 |
H01J37/32;H01J37/34;H01L21/02;H01L21/3213;(IPC1-7):C23C15/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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