| 摘要 |
A method of vapor phase growth of GaAs under kinetically limited growth conditions, by which an epitaxial layer of GaAs having an enhanced thickness uniformity can be formed on the surface of a substrate having a large area with good reproducibility. A substrate crystal is placed in a uniform temperature region where the growth temperature TD (K) is maintained at a level of approximately 650 DEG to approximately 700 DEG C. and GaAs is grown in the uniform temperature region while maintaining the molar fraction (MF) of arsenic in the feed gas within a range of 2.6x1011exp(-3.1x104/TD)>MF>1.5x1017exp(-4.5x104/TD).
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