| 摘要 |
In a thyristor, a junction field effect transistor is provided for controlling an emitter short circuit. The thyristor has an outer n-emitter, an outer p-emitter, each carrying a respective electrode, a p-base and an n-base between and respectively adjacent the emitters, and the emitter short circuit is constituted by a semiconductor zone in one of the emitters and doped opposite to that emitter and carrying a gate electrode. A portion of the emitter under the zone constitutes a channel zone for the field effect transistor, while lateral portions of the emitter constitute a source and drain.
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