| 摘要 |
PURPOSE:To prevent the mutual diffusion between transparent conductive film and Si film from happening improving the reliability by a method wherein, when a transparent conductive film, a transparent insulating film, an amorphous Si film and an ohmic electrode are laminated in the order on a transparent insulated substrate to produce a photovoltaic device, a silicon oxynitride film is utilized as a transparent insulating film. CONSTITUTION:A transparent conductive film 12 comprising indium Sn oxide is formed on a transparent glass-made substrate 11 by means of sputtering etc. and the film 12 is coated with silicon oxynitride film 13 from several to scores of Angstrom thick. At this time, the film 13 is formed by means of decomposing ethoxy silane using nitrogen or hydrogen containing 6-0.1 volume % of nitrogen oxide such as NO, NO2, N2O5 etc. Next an amorphous Si layer 14 comprising a P type layer 141, 100-1,000 Angstrom thick, an I type layer 142, 0.5-2mum Angstrom thick and an N type layer 143, 300-1,000 Angstrom thick is laminated on the layer 13 and finally the layer 143 is coated with an Al-Cr onmic electrode 15. Through these procedures, the mutual diffusion between the layer 14 and the layer 12 may be prevented from occurring while avoiding the exfoliation of the layer 14. |
