发明名称 |
MEMORY CIRCUIT |
摘要 |
<p>A read resettable memory circuit contains a flip-flop circuit (10) consisting of a flip-flop (FF) and an edge-triggered control circuit (CC) and a fall-through latch (16). The control circuit sets the flip-flop in response to a selected edge transition in a first clock (O1) when an appropriate external logical set signal (S) is received and resets the flip-flop in response to a selected edge transition in a second clock (O2) when an appropriate feedback logical reset signal (R) is received. The latch provides the reset signal at a value corresponding to the current logic state of the flip-flop during each period running from the selected edge transition of the second clock to its opposite edge transition and at a value corresponding to the logic state of the flip-flop that exists just before each opposite edge transition of the second clock during each remaining following period.</p> |
申请公布号 |
JPS58209219(A) |
申请公布日期 |
1983.12.06 |
申请号 |
JP19830064634 |
申请日期 |
1983.04.14 |
申请人 |
PHILIPS' GLOEILAMPENFABRIEKEN NV |
发明人 |
SHIN BAGAUOTSUCHI YARAMANCHIRI;SAIDO TAIDO MAMATSUDO |
分类号 |
G11C11/41;G11C11/412;H03K3/356 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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