| 摘要 |
This application describes a non-volatile static ram element. The element includes a pair of field effect transistors T1 and T2 whose drain and gate electrodes are cross coupled to form a flip-flop circuit and a non-volatile semiconductor memory element D1, D2 is connected between the drain electrode of each transistor and a reference potential. Data may be retained in the semiconductor memory element independently of normal operation of the flip flop and true data may be returned to the ram element at any convenient time. The ram element therefore operates as a true non-volatile static ram element.
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