| 摘要 |
PURPOSE:To eliminate the contamination generating when an insulative layer is formed by flattening the region in the vicinity of the junction part of the titled element by a method wherein an anisotropic etching is performed on the part other than the tunnel junction part which constitutes the junction element, thereby enabling to properly specify the dimensions of the junction part and to prevent the contamination caused by etching. CONSTITUTION:The first superconductive electrode 32 consisting of Nb of prescribed measurements and the second superconductive electrode 33 consisting of Pb are formed by lamination on an insulative substrate 31, and a resist mask 34 is provided on said electrode 33 corresponding to the turnnel junction part. Then, an anisotropic etching is performed using said resist mask 34 as a mask, and first, the exposed part of the electrode 33 is removed, and then an insulative layer 35 of SiO2 and the like is coated on the whole surface. Through these procedures, the material for the electrodes 32 and 33 can be specified, and this enables to easily control the depth of the etching. Subsequently, the mask 34 is removed together with the layer 35 located above the mask 34, a tunnel junction layer 36 of several tens Angstrom is generated by performing thermal oxidation on the tunnel junction layer, and an upper superconductive electrode is coated on the surface of the layer 36 and 35. |
